ZnO-Based Memristive Device for Temperature Sensing: Design, Modeling, and Performance Evaluation

Abstract

This paper presents the design and modeling of a highly sensitive ZnO-based memristive temperature sensor, underpinned by the fundamental physics of memristive behavior. Utilizing a multi-physics simulation tool, the proposed model accurately maps temperature variation contours within the ZnO pyroelectric material, paving the way for its application in temperature sensing. An in-depth exploration of the sensor's electrical properties under varying temperature conditions reveals exceptional sensitivity (8.9 µV/K) and showcases the inherent non-volatile memory switching behavior of the memristor, making it ideally suited for dynamic applications. Moreover, this sensor operates inherently bias-free, functioning as a self-powered solution for emerging fields like the Internet of Things.